Datasheet > IRLM120ATF-Q

IRLM120ATF-Q

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	229K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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数据手册

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IRLM120ATF-Q 数据手册

IRLM120A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

R_DS(on)= 0.22 Ω

I_D= 2.3 A

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 10 µA (Max.) @ V_DS= 100V

n Lower R_DS(ON): 0.176 Ω (Typ.)

SOT-223

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

100

2.3

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=70^oC)

Drain Current-Pulsed

I_D

1.85

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

±20

105

2.3

Single Pulsed Avalanche Energy

Avalanche Current

(2)

(1)

(3)

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25^oC) *

Linear Derating Factor *

0.27

6.5

V/ns

2.7

P_D

T_J, T_STG

T_L

0.022

W/^oC

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

^oC

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

^oC/W

R_θJA

Junction-to-Ambient *

46.3

* When mounted on the minimum pad size recommended (PCB Mount).

12 3 4 5 6 7

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