IRLM210

更新时间： 2024-01-05 12:36:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	270K
描述
Advanced Power MOSFET

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中文翻译

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数据手册

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IRLM210 数据手册

IRLM210A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

R_DS(on)= 1.5 Ω

I_D= 0.77 A

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 10 µA (Max.) @ V_DS= 200V

n Lower R_DS(ON): 1.185 Ω (Typ.)

SOT-223

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

200

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_A=25^oC)

Continuous Drain Current (T_A=70^oC)

Drain Current-Pulsed

0.77

0.62

6.1

I_D

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

±20

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

0.77

0.18

5.0

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_A=25 C)

1.8

P_D

W/^oC

Linear Derating Factor

Operating Junction and

0.014

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

^oC

T_L

Thermal Resistance

Symbol

Characteristic

Junction-to-Ambient

Typ.

Max.

Units

^oC/W

R_θJA

69.4

* When mounted on the minimum pad size recommended (PCB Mount).

Rev. A

12 3 4 5 6 7

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