5秒后页面跳转
IRLL110TRPBF PDF预览

IRLL110TRPBF

更新时间: 2024-10-01 20:18:03
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 202K
描述
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN

IRLL110TRPBF 数据手册

 浏览型号IRLL110TRPBF的Datasheet PDF文件第2页浏览型号IRLL110TRPBF的Datasheet PDF文件第3页浏览型号IRLL110TRPBF的Datasheet PDF文件第4页浏览型号IRLL110TRPBF的Datasheet PDF文件第5页浏览型号IRLL110TRPBF的Datasheet PDF文件第6页浏览型号IRLL110TRPBF的Datasheet PDF文件第7页 
PD - 95222  
IRLL110PbF  
HEXFET® Power MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Repetitive Avalanche Rated  
l Logic-Level Gate Drive  
l RDS(on)Specified at VGS= 4V & 5V  
l Fast Switching  
D
VDSS = 100V  
RDS(on) = 0.54Ω  
G
l Lead-Free  
ID = 1.5A  
S
Description  
Third Generation HEXFETs from International Rectifier  
provide the designer with the best combination of fast  
switching, ruggedized device design, low on-resistance  
andcost-effectiveness.  
TheSOT-223packageisdesignedforsurface-mountusing  
vapor phase, infra red, or wave soldering techniques. Its  
uniquepackagedesignallowsforeasyautomaticpick-and-  
place as with other SOT or SOIC packages but has the  
addedadvantageofimprovedthermalperformancedueto  
an enlarged tab for heatsinking. Power dissipation of  
grreater than 1.25W is possible in a typical surface mount  
application.  
S O T -223  
Absolute Maximum Ratings  
Parameter  
Max.  
1.5  
Units  
ID @ Tc = 25°C  
ID @ Tc = 100°C  
IDM  
Continuous Drain Current, VGS @ 5.0 V  
Continuous Drain Current, VGS @ 5.0 V  
Pulsed Drain Current   
0.93  
12  
A
PD @Tc = 25°C  
PD @TA = 25°C  
PowerDissipation  
3.1  
Power Dissipation (PCB Mount)**  
LinearDeratingFactor  
2..0  
0.025  
0.017  
-/+10  
50  
W
Linear Derating Factor (PCB Mount)**  
Gate-to-SourceVoltage  
W/°C  
V
VGS  
EAS  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
IAR  
1.5  
EAR  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
JunctionandStorageTemperatureRange  
Soldewring Temperature, for 10 seconds  
0.31  
5.5  
mJ  
V/ns  
°C  
dv/dt  
TJ, TSTG  
-55 to + 150  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-PCB  
Typ.  
–––  
–––  
Max.  
40  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient.(PCBMount)**  
60  
** When mounted on 1'' square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
www.irf.com  
1
04/27/04  

与IRLL110TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRLL1905 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 1.6A I(D) | TO-220AB
IRLL2703 INFINEON

获取价格

HEXFET?? Power MOSFET
IRLL2703PBF INFINEON

获取价格

HEXFET Power MOSFET
IRLL2703TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRLL2705 INFINEON

获取价格

HEXFET Power MOSFET
IRLL2705PBF INFINEON

获取价格

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) =
IRLL2705TR INFINEON

获取价格

Surface Mount
IRLL2705TRPBF INFINEON

获取价格

DYNAMIC DV/DT RATING
IRLL3303 INFINEON

获取价格

HEXFET Power MOSFET
IRLL3303PBF INFINEON

获取价格

HEXFET Power MOSFET