IRLL110TR

更新时间： 2024-10-01 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	1442K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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IRLL110TR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	TO-261AA
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.13	Is Samacsys：	N
Base Number Matches：	1

IRLL110TR 数据手册

IRLL110, SiHLL110

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Surface Mount

100

• Available in Tape and Reel

• Dynamic dV/dt Rating

Available

_DS(on)(Ω)

V_GS= 5.0 V

0.54

RoHS*

Q_g(Max.) (nC)

6.1

2.6

3.3

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• R_DS(on)Specified at V_GS= 4 V and 5 V

• Fast Switching

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

SOT-223

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performace due to

an enlarged tab for heatsinking. Power dissipation of greater

than 1.25 W is possible in a typical surface mount

application.

N-Channel MOSFET

ORDERING INFORMATION

Package

SOT-223

IRLL110PbF

SiHLL110-E3

IRLL110

IRLL110TRPbF^a

SiHLL110T-E3^a

IRLL110TR^a

SiHLL110T^a

Lead (Pb)-free

SnPb

SiHLL110

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

_C= 25 °C

1.5

Continuous Drain Current

_GSat 5.0 V

I_D

T_C=100°C

0.93

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.025

0.017

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

1.5

Repetitive Avalanche Energy^a

E_AR

0.31

3.1

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.0

dV/dt

5.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 25 mH, R_G= 25 Ω, I_AS= 1.5 A (see fig. 12).

c. I_SD≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91320

S-81366-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRLL110TR相关器件

型号	品牌	获取价格	描述	数据表
IRLL110TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Me
IRLL110TRPBF	VISHAY	获取价格	Power MOSFET
IRLL1905	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 1.6A I(D) \| TO-220AB
IRLL2703	INFINEON	获取价格	HEXFET?? Power MOSFET
IRLL2703PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLL2703TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.9A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRLL2705	INFINEON	获取价格	HEXFET Power MOSFET
IRLL2705PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) =
IRLL2705TR	INFINEON	获取价格	Surface Mount
IRLL2705TRPBF	INFINEON	获取价格	DYNAMIC DV/DT RATING

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