5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRHMJ3250
IRHMJ3250 PDF预览

IRHMJ3250

更新时间： 2024-11-24 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 330K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

阅读下载

中文翻译

获取价格

IRHMJ3250 数据手册

 浏览型号IRHMJ3250的Datasheet PDF文件第2页浏览型号IRHMJ3250的Datasheet PDF文件第3页浏览型号IRHMJ3250的Datasheet PDF文件第4页浏览型号IRHMJ3250的Datasheet PDF文件第5页浏览型号IRHMJ3250的Datasheet PDF文件第6页浏览型号IRHMJ3250的Datasheet PDF文件第7页 
PD-96914  
IRHMJ7250  
RADIATION HARDENED  
POWER MOSFET  
200V, N-CHANNEL  
RAD Hard™ HEXFET® TECHNOLOGY  
SURFACE MOUNT (TO-254AA Tabless)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHMJ7250  
IRHMJ3250  
IRHMJ4250  
100K Rads (Si) 0.10Ω  
300K Rads (Si) 0.10Ω  
600K Rads (Si) 0.10Ω  
26A  
26A  
26A  
26A  
IRHMJ8250 1000K Rads (Si) 0.10Ω  
TO-254AA Tabless  
International Rectifier’s RADHard HEXFET®technology  
provides high performance power MOSFETs for  
space applications. This technology has over a  
decade of proven performance and reliability in  
satellite applications. These devices have been  
characterized for both Total Dose and Single Event  
Effects (SEE). The combination of low Rdson and  
low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
26  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
104  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
8.0 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
12/24/04  
1234567...12

中文翻译

下载PDF

与IRHMJ3250相关器件

型号 品牌 获取价格 描述 数据表
IRHMJ4250 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ53160 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ54160 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ54160PBF INFINEON

获取价格

 		暂无描述
IRHMJ57160 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57260SE INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57260SEPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Me
IRHMJ58160 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ58160PBF INFINEON

获取价格

 		暂无描述
IRHMJ7250 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

与IRHMJ3250相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证