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IRHM93064

更新时间： 2024-09-14 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 129K
描述
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

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IRHM93064 数据手册

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PD - 91438C  
IRHM9064  
JANSR2N7424  
60V, P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
REF: MIL-PRF-19500/660  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM9064  
100K Rads (Si)  
0.05Ω  
-35A* JANSR2N7424  
-35A* JANSF2N7424  
IRHM93064  
300K Rads (Si) 0.05Ω  
International Rectifier’s RAD-Hard HEXFETTM technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
TO-254AA  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
LowTotal Gate Charge  
ProtonTolerant  
SimpleDriveRequirements  
EaseofParalleling  
Hermetically Sealed  
Ceramic Package  
LightWeight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-35*  
-30  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
-140  
250  
DM  
@ T = 25°C  
P
D
W
W/°C  
V
C
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-35  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
-5.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10 S)  
9.3 (typical)  
*Current is limited by internal wire diameter  
For footnotes refer to the last page  
www.irf.com  
1
02/20/03  
12345678

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IRHM93130UPBF INFINEON

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 		Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Me
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IRHM93150D INFINEON

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 		暂无描述
IRHM93150PBF INFINEON

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