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IRHM93150U PDF预览

IRHM93150U

更新时间： 2024-09-15 19:39:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 125K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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中文翻译

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IRHM93150U 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.74其他特性：HIGH RELIABILITY, RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.085 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-MSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：88 A认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM93150U 数据手册

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PD - 90889B  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM9150  
IRHM93150  
P-CHANNEL  
RAD HARD  
Product Summary  
-100 Volt, 0.073Ω, RAD HARD HEXFET  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 3 X 105 Rads (Si). Under identical pre- and post-  
radiation test conditions, International Rectifier’s P-Channel  
RAD HARD HEXFETs retain identical electrical specifica-  
tions up to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required. These devices are also ca-  
pable of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation within a  
few microseconds. Single Event Effect (SEE) testing of In-  
ternational Rectifier P-Channel RAD HARD HEXFETs has  
demonstrated virtual immunity to SEE failure. Since the P-  
Channel RAD HARD process utilizes InternationalRectifier’s  
patented HEXFET technology, the user can expect the high-  
est quality and reliability in the industry.  
Part Number  
IRHM9150  
BVDSS  
-100V  
-100V  
RDS(on)  
0.080Ω  
0.080Ω  
ID  
-22A  
-22A  
IRHM93150  
Features:  
n Radiation Hardened up to 3 x 105 Rads (Si)  
n Single Event Burnout (SEB) Hardened  
n Single Event Gate Rupture (SEGR) Hardened  
n Gamma Dot (Flash X-Ray) Hardened  
n Neutron Tolerant  
n Identical Pre- and Post-Electrical Test Conditions  
n Repetitive Avalanche Rating  
n Dynamic dv/dt Rating  
n Simple Drive Requirements  
n Ease of Paralleling  
P-Channel RAD HARD HEXFET transistors also feature  
all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.They  
are well-suited for applications such as switching power sup-  
plies, motor controls, inverters, choppers, audio amplifiers  
and high-energy pulse circuits in space and weapons  
environments.  
n Hermetically Sealed  
n Electrically Isolated  
n Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHM9150, IRHM93150  
Units  
I
@ V  
= -12V, T = 25°C Continuous Drain Current  
-22  
D
GS  
GS  
C
I
@ V  
= -12V, T = 100°C Continuous Drain Current  
-14  
A
D
C
I
Pulsed Drain Current   
Max. Power Dissipation  
- 88  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
Linear Derating Factor  
1.2  
± 20  
500  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ‚  
Avalanche Current   
GS  
E
mJ  
A
AS  
AR  
I
-22  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
-23  
T
-55 to 150  
J
T
Storage Temperature Range  
STG  
oC  
g
300 (0.063 in. (1.6mm) from case for 10s  
9.3 (typical)  
Lead Temperature  
Weight  
www.irf.com  
1
10/23/98  
12345678

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IRHM93250PBF INFINEON

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