Datasheet > IRHM93250PBF

IRHM93250PBF

更新时间： 2024-09-15 21:20:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

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IRHM93250PBF 数据手册

PD - 91299D

IRHM9250

JANSR2N7423

200V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

REF: MIL-PRF-19500/662

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on) ID

0.315Ω -14A

QPL Part Number

JANSR2N7423

JANSF2N7423

IRHM9250

100K Rads (Si)

300K Rads (Si)

IRHM93250

International Rectifier’s RAD-Hard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-14

= -12V, T = 100°C Continuous Drain Current

-9.0

-56

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

-14

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-41

-55 to 150

^oC

Storage Temperature Range

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

2/19/03

12 3 4 5 6 7 8

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与IRHM93250PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM93250U	INFINEON	获取价格	暂无描述
IRHM93260	ETC	获取价格	-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
IRHM93260PBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Met
IRHMB53064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53064PBF	INFINEON	获取价格	暂无描述
IRHMB53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB54064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMB54Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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