IRHMB53064

更新时间： 2024-11-05 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	178K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHMB53064 数据手册

ꢁ

PD-96972

RADIATION HARDENED

IRHMB57064

POWER MOSFET

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

^60V5^{, N-CHANNEL}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMB57064 100K Rads (Si) 0.006Ω

IRHMB53064 300K Rads (Si) 0.006Ω

IRHMB54064 600K Rads (Si) 0.006Ω

IRHMB58064 1000K Rads (Si) 0.006Ω

45A*

Tabless

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

824

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.3

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

8.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/08/05

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHMB53064相关器件

型号	品牌	获取价格	描述	数据表
IRHMB53064PBF	INFINEON	获取价格	暂无描述
IRHMB53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB54064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMB54Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB57064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB57064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package -
IRHMB57260SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

与IRHMB53064相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMB53064

IRHMB53064 数据手册

与IRHMB53064相关器件

与IRHMB53064相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMB53064

IRHMB53064 数据手册

与IRHMB53064相关器件

与IRHMB53064相关文章

您还可以找

您在本页遇到什么问题？