IRHMB53Z60

更新时间： 2024-11-09 03:00:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	172K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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IRHMB53Z60 数据手册

ꢁ

PD-96973

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

IRHMB57Z60

30V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMB57Z60 100K Rads (Si) 0.0045Ω 45A*

IRHMB53Z60 300K Rads (Si) 0.0045Ω 45A*

IRHMB54Z60 600K Rads (Si) 0.0045Ω 45A*

IRHMB58Z60 1000K Rads (Si) 0.0045Ω 45A*

Tabless

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

1250

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

1.08

-55 to 150

V/ns

dv/dt

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

8.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/08/05

12 3 4 5 6 7 8

中文翻译

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与IRHMB53Z60相关器件

型号	品牌	获取价格	描述	数据表
IRHMB53Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB54064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMB54Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB57064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB57064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package -
IRHMB57260SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMB57260SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRHMB57260SESCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package

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