Datasheet > IRHMB57Z60SCS

IRHMB57Z60SCS

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	164K
描述
Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package - TO-254AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL

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IRHMB57Z60SCS 数据手册

ꢁ

PD-96973A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

IRHMB57Z60

30V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMB57Z60 100K Rads (Si) 0.0055Ω 45A*

IRHMB53Z60 300K Rads (Si) 0.0055Ω 45A*

IRHMB54Z60 600K Rads (Si) 0.0055Ω 45A*

IRHMB58Z60 1000K Rads (Si) 0.0055Ω 45A*

Tabless

Low-Ohmic

TO-254AA

Features:

Low RDS(on)

Fast Switching

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy

Avalanche Current

1250

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

20.8

1.08

-55 to 150

V/ns

dv/dt

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

8.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/04/15

12 3 4 5 6 7 8

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与IRHMB57Z60SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMB58064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB58064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMB58Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB58Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB597064	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
IRHMB597064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
IRHMB597064SCV	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
IRHMB6S7160	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package
IRHMB6S7160SCS	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package
IRHMB6S7260	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package

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