Datasheet > IRHMB6S7260

IRHMB6S7260

更新时间： 2024-11-21 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	474K
描述
Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package - TO-254AA Tabless Low Ohmic, 100 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHMB6S7260 数据手册

PD-97860

IRHMB6S7260

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TABLESS - TO-254AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHMB6S7260 100 kRads(Si)

45A*

0.029

IRHMB6S3260

300 kRads(Si)

TO-254AA

(TABLESS)

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

45*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

180

208

1.67

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

344

V_GS

E_AS

I_AR

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.4

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2017-01-30

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHMB6S7260相关器件

型号	品牌	获取价格	描述	数据表
IRHMB6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package
IRHMB7260	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R4 in a TO-254AA Tabless Low Ohmic package
IRHMB7360SE	INFINEON	获取价格	Rad hard, 400V, 22A, single, N-channel MOSFET, R4 in a TO-254AA Tabless Low Ohmic package
IRHMJ3250	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ4250	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ53160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ54160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ54160PBF	INFINEON	获取价格	暂无描述
IRHMJ57160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57260SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

与IRHMB6S7260相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMB6S7260

IRHMB6S7260 数据手册

与IRHMB6S7260相关器件

与IRHMB6S7260相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMB6S7260

IRHMB6S7260 数据手册

与IRHMB6S7260相关器件

与IRHMB6S7260相关文章

您还可以找

您在本页遇到什么问题？