Datasheet > IRHM93260

IRHM93260

更新时间： 2024-11-04 23:58:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	124K
描述
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

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IRHM93260 数据手册

PD - 93858

IRHM9260

JANSR2N7426

200V,P-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

REF: MIL-PRF-19500/660

RAD-Hard^™HEXFET^®TECHNOLOGY

Part Number Radiation Level

RDS(on)

ID QPL Part Number

IRHM9260

100K Rads (Si)

300K Rads (Si)

0.160Ω -27A JANSR2N7426

0.160Ω -27A JANSF2N7426

IRHM93260

TO-254AA

International Rectifier’s RAD-Hard^TMHEXFET^®

MOSFET technology provides high performance

power MOSFETs for space applications. This tech-

nology has over a decade of proven performance

and reliability in satellite applications. These de-

vices have been characterized for both Total Dose

and Single Event Effects (SEE). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These de-

vices retain all of the well established advantages

of MOSFETs such as voltage control, fast switch-

ing, ease of paralleling and temperature stability

of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-27

= -12V, T = 100°C Continuous Drain Current

-17

-108

250

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

2.0

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

-27

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-9.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

11/27/00

12 3 4 5 6 7 8

中文翻译

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与IRHM93260相关器件

型号	品牌	获取价格	描述	数据表
IRHM93260PBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Met
IRHMB53064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53064PBF	INFINEON	获取价格	暂无描述
IRHMB53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB54064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMB54Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB54Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
IRHMB57064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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