Datasheet > IRHM93230

IRHM93230

更新时间： 2024-11-08 23:58:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	107K
描述
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

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IRHM93230 数据手册

Provisional Data Sheet No. PD-9.1395

IRHM9230

P-CHANNEL

REPETETIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

RAD HARD

Product Summary

-200 Volt, 0.8Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Under identical pre- and post-radia-

tion test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retain identical electrical specifications

up to 1 x 10⁵Rads (Si) total dose. No compensation in gate

drive circuitry is required. These devices are also capable

of surviving transient ionization pulses as high as 1 x 10¹²

Rads (Si)/Sec, and return to normal operation within a few

microseconds. Single Event Effect (SEE) testing of Inter-

national Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the

P-Channel RAD HARD process utilizes International

Rectifier’s patented HEXFET technology, the user can ex-

pect the highest quality and reliability in the industry.

Part Number

IRHM9230

BV_DSS

-200V

R_DS(on)

I_D

0.8Ω

-6.5A

Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control,very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

■ Simple Drive Requirements

■ Ease of Paralleling

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high-energy pulse circuits in space and weap-

ons environments.

■ Hermetically Sealed

■ Ceramic Eyelets

■ Electrically Isolated

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHM9230

-6.5

Units

@ V

= -12V, T = 25°C Continuous Drain Current

GS C

= -12V, T = 100°C Continuous Drain Current

-4.1

Pulsed Drain Current

-26

@ T = 25°C

Max. Power Dissipation

W/K ꢀ

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

330

-6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

7.5

dv/dt

-5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1 .6mm) from case for 10s)

9.3 (typical)

Notes: See page 4

12 3 4

中文翻译

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与IRHM93230相关器件

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IRHM93250	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
IRHM93250DPBF	INFINEON	获取价格	暂无描述
IRHM93250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met
IRHM93250U	INFINEON	获取价格	暂无描述
IRHM93260	ETC	获取价格	-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
IRHM93260PBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Met
IRHMB53064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53064PBF	INFINEON	获取价格	暂无描述
IRHMB53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB53Z60PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me

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