IRHM93130D

更新时间： 2024-11-05 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	132K
描述
Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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IRHM93130D 数据手册

PD - 90888C

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

IRHM9130

100V, P-CHANNEL

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHM9130

100K Rads (Si)

300K Rads (Si)

0.3Ω

-11A

IRHM93130

International Rectifier’s RAD-Hard HEXFET^TMtechnol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

ProtonTolerant

SimpleDriveRequirements

EaseofParalleling

Hermetically Sealed

Ceramic Package

LightWeight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-11

-7.0

-44

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

190

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-10

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 ( 0.063 in. (1.6mm) from case for 10s)

9.3 (typical)

For footnotes refer to the last page

www.irf.com

02/18/03

12 3 4 5 6 7 8

中文翻译

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与IRHM93130D相关器件

型号	品牌	获取价格	描述	数据表
IRHM93130DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Me
IRHM93130SCS	INFINEON	获取价格	Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
IRHM93130UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Me
IRHM93150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM93150D	INFINEON	获取价格	暂无描述
IRHM93150PBF	INFINEON	获取价格	暂无描述
IRHM93150U	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHM93150UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHM93160	ETC	获取价格	-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
IRHM93230	ETC	获取价格	-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

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