Datasheet > IRG4BG40SD

IRG4BG40SD

更新时间： 2024-11-02 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
35页	97K
描述
Fit Rate / Equivalent Device Hours

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中文翻译

获取价格

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IRG4BG40SD 数据手册

Quarterly Reliability Report

for

T0247 / T0220 Products Manufactured at

IRGB

IGBT / CoPack

ISSUE.3.

October 1997

IGBT / CoPack

Quarterly Reliability Report

Page 1 of 35

12 3 4 5 6 7...35

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型号	品牌	获取价格	描述	数据表
IRG4BG40UD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4BH20K-L	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BH20K-LPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )
IRG4BH20K-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BH20K-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BH20K-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG4BH20K-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, LEAD FRE
IRG4BH20K-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG4BH20K-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, LEAD FRE
IRG4BH40FD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours