Datasheet > IRG4CC10UB

IRG4CC10UB

更新时间： 2024-09-26 23:58:55

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数据手册

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IRG4CC10UB 数据手册

PD-91826

IRG4CC10UB

IRG4CC10UB IGBT Die in Wafer Form

600 V

Size 1

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 1.5A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

250µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 1.1µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag (1 kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

.080" x .120"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5236

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4BC10U

Die Outline

www.irf.com

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