Datasheet > IRG4C30W-S

IRG4C30W-S

更新时间： 2024-09-26 23:58:55

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其他 - ETC		/
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描述

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中文翻译

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数据手册

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IRG4C30W-S 数据手册

PD - 91790

IRG4BC30W-S

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

V_CES= 600V

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

V_{CE(on) typ.}= 2.10V

@V_GE= 15V, I_C= 12A

• Low IGBT conduction losses

n-channel

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

D ²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

180

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient, ( PCB Mounted,steady-state)*

–––

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering

techniques refer to application note #AN-994.

www.irf.com

8/13/98

12 3 4 5 6 7 8

中文翻译

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