Datasheet > IRG4BH20K-STRL

IRG4BH20K-STRL

更新时间： 2024-09-27 20:01:23

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅瞄准线晶体管
页数	文件大小	规格书
9页	250K
描述
Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3

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数据手册

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IRG4BH20K-STRL 数据手册

PD-95891A

IRG4BH20K-SPbF

Short Circuit Rated

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast IGBT

Features

• High short circuit rating optimized for motor control,

t_sc=10µs @ V_CC= 720V , T_J= 125°C,

V_CES= 1200V

V_GE= 15V

• Combines low conduction losses with high

switching speed

V_{CE(on) typ.}= 3.17V

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

@V_GE= 15V, I_C= 5.0A

n-channel

• Industry standard D²Pak package

• Lead-Free

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBT's offer highest power

density motor controls possible

D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

1200

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

±20

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

130

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.1

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

°C/W

–––

6 (0.21)

–––

g (oz)

www.irf.com

01/21/2010

12 3 4 5 6 7...9

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