IRFY240CM

更新时间： 2024-01-23 03:53:12

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	252K
描述
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)

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IRFY240CM 数据手册

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Provisional Data Sheet No. PD 9.1289B

HEXFET^®POWER MOSFET

IRFY240CM

N-CHANNEL

200 Volt, 0.18Ω HEXFET

Product Summary

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors. The effi-

cient geometry design achieves very low on-state re-

sistance combined with high transconductance.

Part Number

DSS

DS(on)

IRFY240CM

200V

0.18Ω

16A

HEXFET transistors also feature all of the well-estab-

lished advantages of MOSFETs, such as voltage con-

trol, very fast switching, ease of paralleling and electri-

cal parameter temperature stability. They are well-suited

for applications such as switching power supplies, mo-

tor controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required.

Features

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

n Ceramic Eyelets

The HEXFET transistor’s totally isolated package elimi-

nates the need for additional isolating material between

the device and the heatsink. This improves thermal effi-

ciency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

IRFY240CM

Units

@ V

=10V, T = 25°C

Continuous Drain Current

10.2

@ V =10V, T = 100°C

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalance Energy

Avalance Current

@ T = 25°C

100

0.8

W/Kꢀ

±20

580

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

V/ns

-55 to 150

Storage Temperature Range

LeadTemperature

°C

stg

300 (0.063 in (1.6mm) from

case for 10 sec)

°C

Weight

4.3 (typical)

To Order

12 3 4 5 6

中文翻译

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IRFY240CM 替代型号

型号	品牌	替代类型	描述	数据表
IRFY240C	INFINEON	完全替代	POWER MOSFET THRU-HOLE (TO-257AA
IRFY240	SEME-LAB	功能相似	N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

与IRFY240CM相关器件

型号	品牌	获取价格	描述	数据表
IRFY240CMPBF	INFINEON	获取价格	暂无描述
IRFY240CMSCX	INFINEON	获取价格	200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY240CMSCXPBF	INFINEON	获取价格	暂无描述
IRFY240CSCS	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240CSCVPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240CSCX	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240M	SEME-LAB	获取价格	N-Channel MOSFET in a Hermetically sealed
IRFY240MEA	INFINEON	获取价格	暂无描述
IRFY240MEAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRFY240MEBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met

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