是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-257AB |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.12 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.18 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AB |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY240MEA | INFINEON |
获取价格 |
暂无描述 | |
IRFY240MEAPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFY240MEBPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFY240MECPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFY240MEDPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFY240MEPBF | INFINEON |
获取价格 |
暂无描述 | |
IRFY240SCVPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met | |
IRFY310 | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed | |
IRFY310C | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed | |
IRFY320 | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed |