Datasheet > IRFY340CMSCV

IRFY340CMSCV

更新时间： 2024-09-25 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	145K
描述
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV

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IRFY340CMSCV 技术参数

生命周期：	Active	包装说明：	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.61	其他特性：	HIGH RELIABILITY
雪崩能效等级（Eas）：	520 mJ	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	400 V
最大漏极电流 (ID)：	8.7 A	最大漏源导通电阻：	0.55 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-257AA
JESD-30 代码：	S-XSFM-P3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	35 A	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFY340CMSCV 数据手册

PD - 91290C

IRFY340C,IRFY340CM

400V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

Ceramic

IRFY340C

0.55 Ω

8.7A

IRFY340CM

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Ideally Suited For Space Level

Applications

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C Continuous Drain Current

8.7

5.5

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

520

8.7

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

4.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

4/18/01

12 3 4 5 6 7

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与IRFY340CMSCV相关器件

型号	品牌	获取价格	描述	数据表
IRFY340CSCV	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me
IRFY340CSCX	INFINEON	获取价格	400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY340M	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA)
IRFY340MEAPBF	INFINEON	获取价格	暂无描述
IRFY340MEBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Me
IRFY340SCX	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA)
IRFY340SCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me
IRFY420	SEME-LAB	获取价格	N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
IRFY420C	SEME-LAB	获取价格	N-Channel MOSFET in a Hermetically sealed
IRFY420SM	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| CHIP

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