是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 6.9 A | 最大漏源导通电阻: | 0.55 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AB |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY340SCXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me |
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IRFY420 | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. |
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IRFY420C | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed |
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IRFY420SM | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | CHIP |
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IRFY430 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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IRFY430C | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (TO-257AA) |
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IRFY430C | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. |
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IRFY430CM | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A) |
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IRFY430CSCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Met |
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IRFY430M | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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