IRFY240MEA

更新时间： 2024-11-24 13:08:51

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英飞凌 - INFINEON		/
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7页	215K
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IRFY240MEA 数据手册

PD-91289E

IRFY240C,IRFY240CM

200V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

Ceramic

IRFY240C

0.18 Ω

16A

IRFY240CM

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Ideally Suited For Space Level

Applications

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C Continuous Drain Current

10.2

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

@ T = 25°C

Max. Power Dissipation

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

580

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

5.0

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

02/06/08

12 3 4 5 6 7

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