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IRFY240 PDF预览

IRFY240

更新时间: 2024-01-17 16:08:01
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
2页 18K
描述
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

IRFY240 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-MSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFY240 数据手册

 浏览型号IRFY240的Datasheet PDF文件第2页 
IRFY240  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
POWER MOSFET  
FOR HI–REL  
4.70  
5.00  
10.41  
10.67  
0.70  
0.90  
APPLICATIONS  
3.56  
3.81  
Dia.  
VDSS  
200V  
12A  
ID(cont)  
RDS(on)  
1 2 3  
0.19  
FEATURES  
0.89  
1.14  
• HERMETICALLY SEALED TO–220 METAL  
PACKAGE  
2.54  
BSC  
2.65  
2.75  
• SIMPLE DRIVE REQUIREMENTS  
• LIGHTWEIGHT  
TO–220M – Metal Package  
Pad 1 – Gate  
Pad 2 – Drain  
Pad 3 – Source  
• SCREENING OPTIONS AVAILABLE  
• ALL LEADS ISOLATED FROM CASE  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
±20V  
12A  
GS  
I
I
I
Continuous Drain Current @ T  
Continuous Drain Current @ T  
Pulsed Drain Current  
= 25°C  
D
case  
= 100°C  
7.8A  
D
case  
48A  
DM  
P
Power Dissipation @ T = 25°C  
case  
60W  
D
Linear Derating Factor  
0.48W/°C  
T , T  
Operating and Storage Temperature Range  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
–55 to 150°C  
2.1°C/W max.  
80°C/W max.  
J
stg  
R
θJC  
θJA  
R
Prelim. 9/95  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

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