5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> IRFY240CMSCXPBF
IRFY240CMSCXPBF PDF预览

IRFY240CMSCXPBF

更新时间： 2024-01-28 15:34:44
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 215K
描述
暂无描述

阅读下载

中文翻译

获取价格

IRFY240CMSCXPBF 数据手册

 浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第2页浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第3页浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第4页浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第5页浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第6页浏览型号IRFY240CMSCXPBF的Datasheet PDF文件第7页 
PD-91289E  
IRFY240C,IRFY240CM  
200V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number RDS(on)  
ID  
Eyelets  
Ceramic  
Ceramic  
IRFY240C  
0.18 Ω  
0.18 Ω  
16A  
16A  
IRFY240CM  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-state  
resistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as  
switching power supplies, motor controls, inverters,  
choppers, audio amplifiers, high energy pulse circuits, and  
virtually any application where high reliability is required.  
The HEXFET transistor’s totally isolated package eliminates  
the need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-257AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Ideally Suited For Space Level  
Applications  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C Continuous Drain Current  
16  
10.2  
64  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
100  
W
W/°C  
V
D
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
580  
mJ  
A
AS  
I
16  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
10  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
°C  
g
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
02/06/08  
1234567

中文翻译

下载PDF

与IRFY240CMSCXPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFY240CSCS INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240CSCVPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240CSCX INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IRFY240M SEME-LAB

获取价格

 		N-Channel MOSFET in a Hermetically sealed
IRFY240MEA INFINEON

获取价格

 		暂无描述
IRFY240MEAPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRFY240MEBPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRFY240MECPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRFY240MEDPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRFY240MEPBF INFINEON

获取价格

 		暂无描述

与IRFY240CMSCXPBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证