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IRFU9022PBF PDF预览

IRFU9022PBF

更新时间: 2024-11-18 05:39:31
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威世 - VISHAY /
页数 文件大小 规格书
9页 1210K
描述
Power MOSFET

IRFU9022PBF 数据手册

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IRFR9022, IRFU9022, SiHFR9022, SiHFU9022  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Surface Mountable (Order as IRFR9022/SiHFR9022)  
- 50  
Available  
Straight Lead Option (Order as IRFU9022/SiHFU9022)  
R
DS(on) (Ω)  
VGS = - 10 V  
0.33  
RoHS*  
• Repetitive Avalanche Ratings  
• Dynamic dV/dt Rating  
Qg (Max.) (nC)  
14  
6.5  
6.5  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
• Ease of Paralleling  
Configuration  
Single  
• Lead (Pb)-free Available  
S
DESCRIPTION  
DPAK  
IPAK  
The Power MOSFET technology is the key to Vishay’s  
advanced line of Power MOSFET transistors. The efficient  
geometry and unique processing of this latest “State of the  
Art” design achieves: very low on-state resistance combined  
with high transconductance; superior reverse energy and  
diode recovery dV/dt.  
(TO-252)  
(TO-251)  
G
The Power MOSFET transistors also feature all of the well  
established advantages of MOSFET’S such as voltage  
control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
D
P-Channel MOSFET  
Surface mount packages enhance circuit performance by  
reducing stray inductances and capacitance. The TO-252  
surface mount package brings the advantages of Power  
MOSFET’s to high volume applications where PC Board  
surface mounting is desirable. The surface mount option  
IRFR9022/SiHFR9022 is provided on 16mm tape. The  
straight lead option IRFR9022/SiHFR9022 of the device is  
called the IPAK (TO-251).  
They are well suited for applications where limited heat  
dissipation is required such as, computers and peripherals,  
telecommunication equipment, DC/DC converters, and a  
wide range of consumer products.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR9022PbF  
SiHFR9022-E3  
IRFR9022  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR9022TRLPbFa  
SiHFR9022TL-E3a  
IRFR9022TRLa  
SiHFR9022TLa  
IPAK (TO-251)  
IRFU9022PbF  
SiHFU9022-E3  
IRFU9022  
IRFR9022TRPbFa  
SiHFR9022T-E3a  
IRFR9022TRa  
Lead (Pb)-free  
SnPb  
SiHFR9022  
SiHFR9022Ta  
SiHFU9022  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
- 50  
20  
V
VGS  
T
C = 25 °C  
- 9.0  
- 5.7  
- 36  
0.33  
440  
- 9.9  
4.2  
Continuous Drain Current  
V
GS at - 10 V  
ID  
TC =100°C  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
EAR  
mJ  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91349  
S-Pending-Rev. A, 10-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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