IRFU9022PBF

更新时间： 2024-11-09 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1210K
描述
Power MOSFET

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数据手册

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IRFU9022PBF 数据手册

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

•

Surface Mountable (Order as IRFR9022/SiHFR9022)

- 50

Available

•

Straight Lead Option (Order as IRFU9022/SiHFU9022)

_DS(on)(Ω)

V_GS= - 10 V

0.33

RoHS*

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance combined

with high transconductance; superior reverse energy and

diode recovery dV/dt.

(TO-252)

(TO-251)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of Power

MOSFET’s to high volume applications where PC Board

surface mounting is desirable. The surface mount option

IRFR9022/SiHFR9022 is provided on 16mm tape. The

straight lead option IRFR9022/SiHFR9022 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9022PbF

SiHFR9022-E3

IRFR9022

DPAK (TO-252)

IRFR9022TRLPbF^a

SiHFR9022TL-E3^a

IRFR9022TRL^a

SiHFR9022TL^a

IPAK (TO-251)

IRFU9022PbF

SiHFU9022-E3

IRFU9022

IRFR9022TRPbF^a

SiHFR9022T-E3^a

IRFR9022TR^a

Lead (Pb)-free

SnPb

SiHFR9022

SiHFR9022T^a

SiHFU9022

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 50

V_GS

_C= 25 °C

- 9.0

- 5.7

- 36

0.33

440

- 9.9

4.2

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7...9

中文翻译

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与IRFU9022PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFU9024	VISHAY	获取价格	Power MOSFET
IRFU9024	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)
IRFU9024	KERSEMI	获取价格	Power MOSFET
IRFU9024	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRFU9024N	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
IRFU9024N	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFU9024N	KERSEMI	获取价格	Ultra Low On-Resistance
IRFU9024NC	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRFU9024NCPBF	KERSEMI	获取价格	HEXFET Power MOSFET
IRFU9024NCPBF	INFINEON	获取价格	HEXFET POWER MOSFET

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