Datasheet > IRFU9020PBF

IRFU9020PBF

更新时间： 2024-11-18 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
8页	4086K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFU9020PBF 数据手册

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Power MOSFET

FEATURES

• Surface Mountable (Order As IRFR9020/SiHFR9020)

PRODUCT SUMMARY

V_DS(V)

- 50

Available

• Straight Lead Option (Order As IRFU9020/SiHFU9020)

R_DS(on)(Ω)

V_GS= - 10 V

0.28

RoHS*

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

6.5

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance combined

with high transconductance; superior reverse energy and

diode recovery dV/dt.

(TO-252)

(TO-251)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of Power

MOSFET’s to high volume applications where PC Board

surface mounting is desirable. The surface mount option

IRFR9020/SiHFR9020 is provided on 16mm tape. The

straight lead option IRFR9020/SiHFR9020 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9020PbF

SiHFR9020-E3

IRFR9020

DPAK (TO-252)

IRFR9020TRLPbF^a

SiHFR9020TL-E3^a

IRFR9020TRL^a

SiHFR9020TL^a

IPAK (TO-251)

IRFU9020PbF

SiHFU9020-E3

IRFU9020

IRFR9020TRPbF^a

SiHFR9020T-E3^a

IRFR9020TR^a

Lead (Pb)-free

SnPb

SiHFR9020

SiHFR9020T^a

SiHFU9020

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 50

V_GS

_C= 25 °C

- 9.9

- 6.3

- 40

0.33

440

- 9.9

4.2

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.kersemi.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFU9020PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFU9022	VISHAY	获取价格	Power MOSFET
IRFU9022	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFU9022	SAMSUNG	获取价格	Power Field-Effect Transistor, 9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal
IRFU9022PBF	VISHAY	获取价格	Power MOSFET
IRFU9024	VISHAY	获取价格	Power MOSFET
IRFU9024	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)
IRFU9024	KERSEMI	获取价格	Power MOSFET
IRFU9024	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRFU9024N	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
IRFU9024N	FREESCALE	获取价格	HEXFETÂ® Power MOSFET

与IRFU9020PBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFU9020PBF

IRFU9020PBF 数据手册

与IRFU9020PBF相关器件

与IRFU9020PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFU9020PBF

IRFU9020PBF 数据手册

与IRFU9020PBF相关器件

与IRFU9020PBF相关文章

您还可以找

您在本页遇到什么问题？