Datasheet > IRFU410

IRFU410

更新时间： 2024-11-23 22:18:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	59K
描述
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

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IRFU410 数据手册

IRFR410, IRFU410

Data Sheet

July 1999

File Number 3372.2

1.5A, 500V, 7.000 Ohm, N-Channel Power

MOSFETs

Features

• 1.5A, 500V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

= 7.000Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• High Input Impedance

• 150 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17445.

Ordering Information

Symbol

PART NUMBER

IRFU410

IRFR410

PACKAGE

TO-251AA

TO-252AA

BRAND

IFU410

IFR410

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-401

12 3 4 5 6 7

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