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IRFS240B PDF预览

IRFS240B

更新时间: 2024-11-23 22:40:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 685K
描述
200V N-Channel MOSFET

IRFS240B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:TO-3PF, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
雪崩能效等级(Eas):250 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):12.8 A最大漏极电流 (ID):12.8 A
最大漏源导通电阻:0.18 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):73 W最大脉冲漏极电流 (IDM):51.2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFS240B 数据手册

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November 2001  
IRFS240B  
200V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supply and motor control.  
12.8A, 200V, R  
= 0.18@V = 10 V  
DS(on) GS  
Low gate charge ( typical 45 nC)  
Low Crss ( typical 45 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
G!  
TO-3PF  
IRFS Series  
!
S
G D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFS240B  
200  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
12.8  
A
D
C
- Continuous (T = 100°C)  
8.1  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
51.2  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
250  
mJ  
A
12.8  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.3  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
73  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.59  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
1.7  
40  
θJC  
θJA  
--  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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