是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3PF | 包装说明: | TO-3PF, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.75 |
雪崩能效等级(Eas): | 250 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 12.8 A | 最大漏极电流 (ID): | 12.8 A |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 73 W | 最大脉冲漏极电流 (IDM): | 51.2 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS240B_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, M | |
IRFS241 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 12.5A I(D) | SOT-186VAR | |
IRFS242 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS244 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10.2A I(D) | TO-247VAR | |
IRFS244A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | TO-247VAR | |
IRFS244B | FAIRCHILD |
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250V N-Channel MOSFET | |
IRFS250 | FAIRCHILD |
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200V N-Channel MOSFET | |
IRFS250A | INFINEON |
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Advanced Power MOSFET | |
IRFS250B | FAIRCHILD |
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200V N-Channel MOSFET | |
IRFS251 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20.7A I(D) | SOT-186VAR |