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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFS1Z0TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFS1Z0TRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFS1Z3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 750MA I(D) | TO-243AA |
|
| IRFS1Z3TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.75A I(D), 60V, 3.2ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFS1Z3TRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.75A I(D), 60V, 3.2ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFS1Z3TRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.75A I(D), 60V, 3.2ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFS1Z3TRPBF | INFINEON |
获取价格 |
0.75A, 60V, 3.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA, TO-243AB, 2 PIN |
|
| IRFS230 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFS233 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFS23N15D | INFINEON |
获取价格 |
Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) |
|
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