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IRFS23N20DTRLP PDF预览

IRFS23N20DTRLP

更新时间: 2024-10-03 01:22:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 284K
描述
High frequency DC-DC converters

IRFS23N20DTRLP 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):96 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS23N20DTRLP 数据手册

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PD - 95536  
IRFB23N20DPbF  
IRFS23N20DPbF  
IRFSL23N20DPbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
200V  
RDS(on) max  
ID  
24A  
0.10Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
TO-262  
TO-220AB  
IRFB23N20D  
IRFS23N20D  
IRFSL23N20D  
Absolute Maximum Ratings  
Parameter  
Max.  
24  
17  
96  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ‡  
3.8  
W
Power Dissipation  
170  
Linear Derating Factor  
1.1  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.3  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Telecom 48V input Forward Converter  
Notes  through are on page 11  
www.irf.com  
1
7/20/04  

IRFS23N20DTRLP 替代型号

型号 品牌 替代类型 描述 数据表
IRFS23N20DPBF INFINEON

完全替代

SMPS MOSFET
IRFS31N20DTRLP INFINEON

类似代替

Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFS31N20DPBF INFINEON

类似代替

HEXFET Power MOSFET ( VDSS = 200V , RDS(on)ma

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