Datasheet > IRFR3711TRRPBF

IRFR3711TRRPBF

更新时间： 2024-09-14 19:56:55

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	156K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR3711TRRPBF 数据手册

PD-94061B

IRFR3711

IRFU3711

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSS

20V

R_DS(on)max

I_D

6.5mΩ

110A

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

l 100%R_GTested

Benefits

D-Pak

IRFR3711

I-Pak

IRFU3711

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Max

Symbol

Parameter

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

100

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

440

2.5

120

Maximum Power Dissipation

@T_A= 25°C

@T = 25°C Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

°C

T_J, T

Junction and Storage Temperature Range

-55 to +150

STG

Thermal Resistance

Symbol

Parameter

Typ

Max

Units

Junction-to-Case

R_θJC

R_θJA

–––

1.04

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

1/27/04

12 3 4 5 6 7...10

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