Datasheet > IRFR3806TR

IRFR3806TR

更新时间： 2024-11-25 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	533K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:43A;Vgs(th)(V):±20;漏源导通电阻:15.8mΩ@10V

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中文翻译

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数据手册

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IRFR3806TR 数据手册

UMW

IRFR3806

N-Channel MOSFET

Features

VDS (V)=60V

RDS(ON)

15.8m (VGS = 10V)

Applications

l High Efficiency Synchronous Rectification in

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

170

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

Avalanche Current c

I_AR

Repetitive Avalanche Energy f

E_AR

7.1

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

2.12

0.50

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient ij

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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