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IRFR3711ZTR PDF预览

IRFR3711ZTR

更新时间: 2024-02-18 19:31:02
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 239K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR3711ZTR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.29
雪崩能效等级(Eas):140 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.0057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):370 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRFR3711ZTR 数据手册

 浏览型号IRFR3711ZTR的Datasheet PDF文件第2页浏览型号IRFR3711ZTR的Datasheet PDF文件第3页浏览型号IRFR3711ZTR的Datasheet PDF文件第4页浏览型号IRFR3711ZTR的Datasheet PDF文件第5页浏览型号IRFR3711ZTR的Datasheet PDF文件第6页浏览型号IRFR3711ZTR的Datasheet PDF文件第7页 
PD- 94061  
IRFR3711  
IRFU3711  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS  
20V  
RDS(on) max  
ID  
110A  
„
6.5mΩ  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
Benefits  
l Ultra-Low Gate Impedance  
D-Pak  
IRFR3711  
I-Pak  
IRFU3711  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-to-Source Voltage  
± 20  
110 „  
69 „  
440  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TC = 25°C  
Maximum Power Dissipationꢀ  
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W
W
120  
0.96  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.04  
50  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)ꢀ  
Junction-to-Ambient  
°C/W  
110  
Notes  through „are on page 10  
www.irf.com  
1
2/7/01  

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