IRFR3711ZTR

更新时间： 2024-11-20 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	239K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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数据手册

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IRFR3711ZTR 数据手册

PD- 94061

IRFR3711

IRFU3711

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSS

20V

R_DS(on)max

I_D

110A

6.5mΩ

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

l Ultra-Low Gate Impedance

D-Pak

IRFR3711

I-Pak

IRFU3711

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

110

440

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C= 25°C

Maximum Power Dissipationꢀ

Maximum Power Dissipation

Linear Derating Factor

2.5

120

0.96

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.04

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB mount)ꢀ

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

2/7/01

12 3 4 5 6 7...10

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与IRFR3711ZTR相关器件

型号	品牌	获取价格	描述	数据表
IRFR3711ZTRL	INFINEON	获取价格	High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3711ZTRLPBF	INFINEON	获取价格	暂无描述
IRFR3711ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil
IRFR3806PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3806TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IRFR3806TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me