Datasheet > IRFR3806

IRFR3806

更新时间： 2024-11-10 14:54:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	515K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFR3806 数据手册

PD - 97313

IRFR3806PbF

IRFU3806PbF

Applications

l High Efficiency Synchronous Rectification in

SMPS

HEXFET^®Power MOSFET

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

60V

12.6m

15.8m

43A

Ω

Benefits

I_D

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D-Pak

IRFR3806PbF

I-Pak

IRFU3806PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

170

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

Avalanche Current c

I_AR

Repetitive Avalanche Energy f

E_AR

7.1

Thermal Resistance

Symbol

Parameter

Typ.

Max.

2.12

–––

Units

R_θJC

–––

0.50

–––

Junction-to-Case j

R_θCS

R_θJA

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient ij

www.irf.com

03/04/08

12 3 4 5 6 7...11

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与IRFR3806相关器件

型号	品牌	获取价格	描述	数据表
IRFR3806PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3806TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IRFR3806TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3910	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
IRFR3910	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR3910HR	INFINEON	获取价格	暂无描述
IRFR3910PBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR3910PBF	INFINEON	获取价格	HEXFET Power MOSFET