型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR3711ZTRPBF | INFINEON |
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Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3711ZTRR | INFINEON |
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Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3806 | INFINEON |
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The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil | |
IRFR3806PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR3806TR | UMW |
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种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时 | |
IRFR3806TRLPBF | INFINEON |
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Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3806TRPBF | INFINEON |
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Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3806TRRPBF | INFINEON |
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Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3910 | INFINEON |
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Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) | |
IRFR3910 | KERSEMI |
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Ultra Low On-Resistance |