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IRFR3711Z PDF预览

IRFR3711Z

更新时间: 2024-11-20 04:18:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 216K
描述
HEXFET Power MOSFET

IRFR3711Z 数据手册

 浏览型号IRFR3711Z的Datasheet PDF文件第2页浏览型号IRFR3711Z的Datasheet PDF文件第3页浏览型号IRFR3711Z的Datasheet PDF文件第4页浏览型号IRFR3711Z的Datasheet PDF文件第5页浏览型号IRFR3711Z的Datasheet PDF文件第6页浏览型号IRFR3711Z的Datasheet PDF文件第7页 
PD - 94651B  
IRFR3711Z  
IRFU3711Z  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS RDS(on) max  
Qg  
18nC  
5.7m:  
20V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
I-Pak  
IRFR3711Z  
IRFU3711Z  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
20  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
93  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
66  
A
370  
79  
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
W
D
D
@TC = 100°C  
39  
Linear Derating Factor  
Operating Junction and  
0.53  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.9  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
Notes  through are on page 11  
www.irf.com  
1
3/2/04  

IRFR3711Z 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3711ZTRPBF INFINEON

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Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me

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