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IRFI3710-012PBF PDF预览

IRFI3710-012PBF

更新时间: 2024-10-29 05:55:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
1页 34K
描述
28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

IRFI3710-012PBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):28 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IRFI3710-012PBF 数据手册

  

与IRFI3710-012PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFI3710-013 INFINEON

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Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-013PBF INFINEON

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Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-017PBF INFINEON

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28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI3710-018 INFINEON

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Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-019 INFINEON

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Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-024 INFINEON

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Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-029PBF INFINEON

获取价格

28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI3710-030 INFINEON

获取价格

Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-030PBF INFINEON

获取价格

Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-031 INFINEON

获取价格

Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me