Datasheet > IRFI48NPBF

IRFI48NPBF

更新时间： 2024-10-28 20:05:11

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	270K
描述
Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3

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IRFI48NPBF 数据手册

PD -94835

IRFIZ48NPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l IsolatedPackage

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 55V

R_DS(on)= 0.016Ω

l Lead-Free

I_D= 40A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

210

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.36

± 20

270

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.4

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

2.8

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

11/13/03

12 3 4 5 6 7...9

中文翻译

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与IRFI48NPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFI4905	INFINEON	获取价格	HEXFET Power MOSFET
IRFI4905-101	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-101PBF	INFINEON	获取价格	41A, 55V, 0.02ohm, P-CHANNEL, Si, POWER, MOSFET
IRFI4905-102	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-102PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-103	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-103PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-104	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-105	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-105PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta

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