Datasheet > IRFI4905

IRFI4905

更新时间： 2024-10-27 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	123K
描述
HEXFET Power MOSFET

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中文翻译

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IRFI4905 数据手册

PD - 9.1526A

IRFI4905

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l P-Channel

V_DSS= -55V

R_DS(on)= 0.02Ω

l Fully Avalanche Rated

Description

I_D= -41A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial

applications. The moulding compound used provides

a high isolation capability and a low thermal resistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

-41

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-29

-260

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.42

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

930

-38

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.3

-5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.4

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

8/25/97

12 3 4 5 6 7 8

中文翻译

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与IRFI4905相关器件

型号	品牌	获取价格	描述	数据表
IRFI4905-101	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-101PBF	INFINEON	获取价格	41A, 55V, 0.02ohm, P-CHANNEL, Si, POWER, MOSFET
IRFI4905-102	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-102PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-103	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-103PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-104	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-105	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-105PBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRFI4905-106	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta

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