Datasheet > IRFI4227

IRFI4227

更新时间： 2024-10-29 11:15:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	608K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFI4227 数据手册

IRFI4227PbF

HEXFET^®Power MOSFET

Features



Advanced Process Technology

Key Parameters

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_DSmax

_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

_RPmax @ T_C= 100°C

200



240

m



Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

T_Jmax

150

°C



Short Fall & Rise Times for Fast Switching

150°C Operating Junction Temperature for

Improved Ruggedness



Repetitive Avalanche Capability for Robustness and

Reliability

TO-220 Full-Pak

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in

Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon

area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable

device for PDP driving applications

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFI4227PbF

TO-220 Full-Pak

Tube

IRFI4227PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_GS

Gate-to-Source Voltage

± 30

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

100

_RP@ T_C= 100°C

Repetitive Peak Current 

Maximum Power Dissipation

Linear Derating Factor

P_D@T_C= 25°C

P_D@T_C= 100°C

W/°C

°C

0.37

T_J

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

-40 to + 150

300

T_STG

10 lbf•in (1.1N•m)

Thermal Resistance

Symbol

R_JC

R_JA

Parameter

Junction-to-Case 

Junction-to-Ambient

Typ.

–––

Max.

2.73

Units

°C/W

2017-04-27

12 3 4 5 6 7...9

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与IRFI4227相关器件

型号	品牌	获取价格	描述	数据表
IRFI4227PBF	INFINEON	获取价格	PDP SWITCH
IRFI4228PBF	INFINEON	获取价格	Advanced Process Technology
IRFI4229PBF	INFINEON	获取价格	PDP SWITCH
IRFI4321	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFI4321PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFI4410ZPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFI460	INFINEON	获取价格	TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
IRFI460D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 21A I(D) \| TO-259VAR
IRFI460U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 21A I(D) \| TO-259VAR
IRFI48NPBF	INFINEON	获取价格	Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met

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