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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFI3710-019 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI3710-024 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI3710-029PBF | INFINEON |
获取价格 |
28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN |
|
| IRFI3710-030 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI3710-030PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI3710-031 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI3710-031PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI4019H-117P | INFINEON |
获取价格 |
DIGITAL AUDIO MOSFET |
|
| IRFI4019H-117PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
|
| IRFI4019HG-117P | INFINEON |
获取价格 |
Integrated Half-Bridge Package |
|
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
意法半导体发布第四代SiC技术，助力电动汽车电驱
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