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IRFI4227PBF PDF预览

IRFI4227PBF

更新时间: 2024-10-28 03:37:11
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管
页数 文件大小 规格书
8页 298K
描述
PDP SWITCH

IRFI4227PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, FULL-PAK, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.11
雪崩能效等级(Eas):54 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):26 A最大漏极电流 (ID):26 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):46 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFI4227PBF 数据手册

 浏览型号IRFI4227PBF的Datasheet PDF文件第2页浏览型号IRFI4227PBF的Datasheet PDF文件第3页浏览型号IRFI4227PBF的Datasheet PDF文件第4页浏览型号IRFI4227PBF的Datasheet PDF文件第5页浏览型号IRFI4227PBF的Datasheet PDF文件第6页浏览型号IRFI4227PBF的Datasheet PDF文件第7页 
PD - 97036A  
IRFI4227PbF  
PDP SWITCH  
Features  
Key Parameters  
l
Advanced Process Technology  
VDS max  
200  
240  
21  
V
V
l
Key Parameters Optimized for PDP Sustain,  
Energy Recovery and Pass Switch Applications  
Low EPULSE Rating to Reduce Power  
Dissipation in PDP Sustain, Energy Recovery  
and Pass Switch Applications  
VDS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
IRP max @ TC= 100°C  
TJ max  
l
m:  
47  
A
l
l
Low QG for Fast Response  
High Repetitive Peak Current Capability for  
Reliable Operation  
150  
°C  
D
D
l
Short Fall & Rise Times for Fast Switching  
150°C Operating Junction Temperature for  
Improved Ruggedness  
l
S
D
G
l
Repetitive Avalanche Capability for Robustness  
and Reliability  
G
S
TO-220AB Full-Pak  
G
D
S
Gate  
Drain  
Source  
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Gate-to-Source Voltage  
Units  
VGS  
±30  
V
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
26  
17  
100  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
47  
Repetitive Peak Current g  
Power Dissipation  
46  
18  
W
Power Dissipation  
0.37  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 150  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lbxin (1.1Nxm)  
N
Thermal Resistance  
Parameter  
Junction-to-Case f  
Junction-to-Ambient f  
Typ.  
Max.  
2.73  
65  
Units  
RθJC  
RθJA  
–––  
–––  
Notes  through are on page 8  
www.irf.com  
1
10/12/05  

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