Datasheet > IRFI4321

IRFI4321

更新时间： 2024-10-29 14:54:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	593K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFI4321 数据手册

IRFI4321PbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

R_DS(on)max.

I_D

150V

12.2m

16m

34A



Motion Control Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

Hard Switched and High Frequency Circuits

Benefits



Low RDSON Reduces Losses

Low Gate Charge Improves the Switching Performance

Improved Diode Recovery Improves Switching & EMI Performance

30V Gate Voltage Rating Improves Robustness

Fully Characterized Avalanche SOA

TO-220 Full-Pak

Gate

Drain

Source

Standard Pack

Quantity

Base Part Number

Package Type

Orderable Part Number

Form

IRFI4321PbF

TO-220 Full-Pak

Tube

IRFI4321PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

140

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

0.37

V_GS

E_AS

T_J

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

Operating Junction and

± 30

170

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

300

10 lbf•in (1.1N•m)

Thermal Resistance

Symbol

R_JC

R_JA

Parameter

Junction-to-Case 

Junction-to-Ambient (PCB Mount)

Typ.

–––

Max.

2.73

Units

°C/W

2017-04-27

12 3 4 5 6 7...9

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