Datasheet > 晶体管 > 功率场效应晶体管> IRFI4019HG-117P

IRFI4019HG-117P

更新时间： 2024-10-28 11:09:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	269K
描述
Integrated Half-Bridge Package

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IRFI4019HG-117P 数据手册

PD - 96274

IRFI4019HG-117P

DIGITAL AUDIO MOSFET

Features

Key Parameters

Integrated Half-Bridge Package

Reduces the Part Count by Half

Facilitates Better PCB Layout

Key Parameters Optimized for Class-D

Audio Amplifier Applications

Low R_DS(ON)for Improved Efficiency

Low Qg and Qsw for Better THD and

Improved Efficiency

V_DS

150

R_DS(ON)typ. @ 10V

Q_gtyp.

Ω

Q_swtyp.

4.1

2.5

150

R_G(int)typ.

T_Jmax

°C

Low Qrr for Better THD and Lower EMI

Can Delivery up to 200W per Channel into

8Ω Load in Half-Bridge Configuration

Amplifier

S1/D2

Lead-Free Package

TO-220 Full-Pak 5 PIN

Halogen-Free

G1, G2

Gate

D1, D2

Drain

S1, S2

Source

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

toachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diodereverserecovery,and

internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such

as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable

device for Class D audio amplifier applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

150

±20

8.7

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.2

E_AS

Single Pulse Avalanche Energy

Power Dissipation

P_D@T_C= 25°C

P_D@T_C= 100°C

Power Dissipation

7.2

Linear Derating Factor

Operating Junction and

0.15

W/°C

°C

T_J

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

6.9

Units

Junction-to-Case

Junction-to-Ambient

R_θ

–––

Notes through are on page 2

www.irf.com

10/08/09

12 3 4 5 6 7

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