是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.37 | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 5.5 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 22 A | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF9133 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Meta |
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IRFF9133 | NJSEMI |
获取价格 |
Trans MOSFET P-CH 80V 6.5A 3-Pin TO-39 |
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IRFF9133 | RENESAS |
获取价格 |
5.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF9133 | ROCHESTER |
获取价格 |
6.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF9133 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Meta |
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IRFF9210 | INFINEON |
获取价格 |
HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
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IRFF9210 | SEME-LAB |
获取价格 |
P-Channel MOSFET in a Hermetically sealed TO39 |
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IRFF9211 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.6A I(D), 150V, 3ohm, 1-Element, P-Channel, Silicon, Metal |
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IRFF9211 | ROCHESTER |
获取价格 |
1.6A, 150V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF9212 | ROCHESTER |
获取价格 |
1.3A, 200V, 4.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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