Datasheet > IRFF9230

IRFF9230

更新时间： 2024-11-19 22:31:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管
页数	文件大小	规格书
7页	330K
描述
-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

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IRFF9230 数据手册

IRFF9230

Data Sheet

February 1999

File Number 2225.2

-4.0A, -200V, 0.800 Ohm, P-Channel Power

MOSFET

Features

• -4.0A, -200V

• r = 0.800Ω

This P-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Formerly developmental type TA17512.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFF9230

TO-205AF

IRFF9230

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-114

12 3 4 5 6 7

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IRFF9230 替代型号

型号	品牌	替代类型	描述	数据表
2N6851	INFINEON	功能相似	-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6851 with Hermetic Packag

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