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IRFH3702PBF

更新时间: 2024-11-05 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 256K
描述
HEXFET Power MOSFET

IRFH3702PBF 数据手册

 浏览型号IRFH3702PBF的Datasheet PDF文件第2页浏览型号IRFH3702PBF的Datasheet PDF文件第3页浏览型号IRFH3702PBF的Datasheet PDF文件第4页浏览型号IRFH3702PBF的Datasheet PDF文件第5页浏览型号IRFH3702PBF的Datasheet PDF文件第6页浏览型号IRFH3702PBF的Datasheet PDF文件第7页 
PD - 97368  
IRFH3702PbF  
HEXFET® Power MOSFET  
Applications  
l
Synchronous Buck Converter for Computer  
Processor Power  
VDSS  
30V  
RDS(on) max  
Qg  
l Isolated DC to DC Converters for Network and  
Telecom  
7.1m @V = 10V  
9.6nC  
GS  
l Buck Converters for Set-Top Boxes  
Benefits  
S
S
l
l
l
l
Low RDS(ON)  
Very Low Gate Charge  
Low Junction to PCB Thermal Resistance  
Fully Characterized Avalanche Voltage and  
Current  
D
D
D
D
S
G
l
l
l
100% Tested for RG  
Lead-Free (Qualified up to 260°C Reflow)  
RoHS compliant (Halogen Free)  
3mm x 3mm PQFN  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
V
V
Gate-to-Source Voltage  
± 20  
16  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
12  
A
42  
120  
2.8  
1.8  
Pulsed Drain Current  
Power Dissipation  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
6.0  
45  
Units  
Rθ  
JC  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient (t<10s)  
Rθ  
JA  
Rθ  
JA  
°C/W  
44  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through † are on page 10  
www.irf.com  
1
02/12/09  

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