Datasheet > IRFH4253D

IRFH4253D

更新时间： 2024-10-15 17:15:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	593K
描述
25V 单个 N 通道 HEXFET Power MOSFET, 采用 PQFN 5mm x 6mm 无铅封装

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数据手册

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IRFH4253D 数据手册

FastIRFET™

IRFH4253DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@V_GS= 4.5V)

4.60

10

1.45

m

Qg _(typical)

I_D

35

(@T_C= 25°C)

Applications

Control and Synchronous MOSFETs for synchronous buck

converters

DUAL PQFN 5X6 mm

Benefits

Features

Control and synchronous MOSFETs in one package

Increased power density

Lower switching losses

Lower conduction losses

Lower Switching Losses

Environmentally friendlier

Increased reliability

Low charge control MOSFET (10nC typical)

results in

Low R_DSONsynchronous MOSFET (<1.45m)

Intrinsic Schottky Diode with Low Forward Voltage on Q2

RoHS Compliant, Halogen-Free



MSL1, Industrial Qualification

Base part number

Package Type

Standard Pack

Orderable Part Number

IRFH4253DTRPbF

Form

Quantity

4000

IRFH4253DPbF

Dual PQFN 5mm x 6mm

Tape and Reel

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Q1 Max.

Q2 Max.

Units

V_GS

± 20

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 4.5V

64

51

145

116

Continuous Drain Current, V_GS@ 4.5V

(Source Bonding Technology Limited)

35

I_DM

Pulsed Drain Current

Power Dissipation

120

580

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.25

0.40

W/°C

°C

T_J

-55 to + 150

T_STG

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

Junction-to-Case 

Junction-to-Ambient 

4.0

2.5

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

R_JA(<10s)

Notes  through  are on page 12

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May 21, 2014

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